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06035J0R8BBS Datasheet(PDF) 2 Page - NXP Semiconductors |
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06035J0R8BBS Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2 RF Device Data NXP Semiconductors A3I20X050N A3I20X050GN Figure 1. Functional Block Diagram Figure 2. Pin Connections Note: Exposed backside of the package is the source terminal for the transistor. aaa-- 033619 VDS1 RFout/VDS2 VGS(P) VGS2(P) VGS1(P) VGS2(C) VGS1(C) RFin VGS(C) Quiescent Current Temperature Compensation Quiescent Current Temperature Compensation aaa--033620 RFout/VDS2 VDS1 VDS1 VGS(P) VGS(C) VGS(P) VGS(C) RFin 8 1 2 3 4 5 6 7 (Top View) Note: VDS1 must be decoupled on the same pin as it is supplied. Do not supply voltage on Pin 1 and decouple on Pin 7 or supply voltage on Pin 7 and decouple on Pin 1. Maximum current allowed between Pin 1 and Pin 7 inside the device is 1.8 A. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C Input Power Pin 20 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 70C, 10 W Avg., W--CDMA, 28 Vdc, IDQ1(Carrier) =28 mA, IDQ2(Carrier) = 133 mA, VGS(Peaking) = 2.05 Vdc, 1840 MHz Stage 1 Stage 2 RJC 7.1 1.9 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) Class 2 Charge Device Model (per JS--002--2014) Class C2b Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. |
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