2

RF Device Data

NXP Semiconductors

A3I20X050N A3I20X050GN

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistor.

aaa-- 033619

Quiescent Current

Temperature Compensation

Quiescent Current

Temperature Compensation

aaa--033620

8

1

2

3

4

5

6

7

(Top View)

Pin 7 and decouple on Pin 1. Maximum current allowed between Pin 1 and Pin 7 inside the device is 1.8 A.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

–0.5, +65

Vdc

Gate--Source Voltage

–0.5, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

–65 to +150

C

Case Operating Temperature Range

–40 to +150

C

–40 to +225

C

Input Power

20

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Stage 1

Stage 2

7.1

1.9

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

Class 2

Charge Device Model (per JS--002--2014)

Class C2b

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

1. Continuous use at maximum temperature will affect MTTF.