GMICP2731-10 datasheet(12/22 Pages) MICROCHIP

Part #	GMICP2731-10

Description	27.5 ??31 GHz 9W GaN PA MMIC

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Manufacturer	MICROCHIP [Microchip Technology]

Direct Link	http://www.microchip.com

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12 / 22 page

2.

Die Specifications

• Units: µm

• Thickness: 100 µm

• Die size tolerance: ±50 μm

• Backside is RF and DC ground

• Amplifier must be biased from both

sides (N) North, (S) South

Figure 2-1. Die Outline Drawing

Table 2-1. I/O Description

Pad No

Pad Size (µm)

Function

Description

1

85×170

RFIN

DC blocked and 50Ω matched

2

85×85

GND

Ground Pad

3

85×85

VG1N

Gate voltage, decoupling and bypass caps required

4

85×85

VG2N

Gate voltage, decoupling and bypass caps required

5

85×85

VG3N

Gate voltage, decoupling and bypass caps required

6

85×85

GND

Ground Pad

7

85×85

VD1N & VD2N

Drain voltage, decoupling and bypass caps required

8

170×170

VD3N

Drain voltage, decoupling and bypass caps required

9

85×85

GND

Ground Pad

10

85×170

RFOUT

DC blocked and 50Ω matched

11

85×85

VREF

Detector reference voltage

GMICP2731-10

Die Specifications

and its subsidiaries

Datasheet

DS-00004072A-page 12

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GMICP2731-10 Datasheet(PDF) 12 Page - Microchip Technology

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