GMICP2731-10

27.5 – 31 GHz 9W GaN PA MMIC

Product Overview

Microchip’s GMICP2731-10 is a Ka Band MMIC power amplifier fabricated using GaN SiC technology. It achieves

39.5 dBm saturated output power from 27.5 – 31 GHz, with 22% PAE and 22 dB small signal gain. The balanced

topology provides excellent broadband input and output match to 50Ω and DC blocking capacitors ensure simple

integration.

Excellent linearity characteristics make GMICP2731-10 well suited to applications in Satellite Communications. The

die are 100% DC and RF tested on wafer ensuring compliance to the electrical specifications.

Key Features

Functional Block Diagram

• Frequency range: 27.5 – 31 GHz

• Pout: 39.5 dBm (Pin = 24 dBm)

• PAE: 22% (Pin = 24 dBm)

• Small Signal Gain: 22 dB (28 GHz)

• Return Loss: 15 dB

• Drain Bias 24V, IDQ = 112 mA – 224 mA

• Technology: GaN on SiC

• Lead-free and RoHS compliant

• Dimensions: 3.025 mm × 3.405 mm × 0.10 mm

VG

VG

VG

VD

VD

VD

RF IN

RF OUT

VG

VG

VG

VD

VD

VD

50Ω

50Ω

Applications

• Satellite Communications

• Aerospace & Defense

• 5G

Typical Performances

Parameter

Typical

Units

Frequency range

27.5 – 31

GHz

Saturated Output Power, Psat

39.5

dBm

Pin = 24 dBm

Power Added Efficiency, PAE

22

%

Pin = 24 dBm

Small Signal Gain, S21

22

dB

Input Return Loss

–15

dB

Output Return Loss

–15

dB

Note: 

1.

Test conditions unless otherwise stated CW, VD = 24V, IDQ = 110 mA ,VG~ –1.84V typical, TA = 25 ºC

and its subsidiaries

Datasheet

DS-00004072A-page 1