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PD69208T4 Datasheet(PDF) 8 Page - Microchip Technology |
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PD69208T4 Datasheet(HTML) 8 Page - Microchip Technology |
8 / 35 page ![]() 1. ESD HBM complies with JESD22 Class 2 standard. 2. ESD CDM complies with JESD22 Class 1 standard. 3. System-level common mode 10/700 µs according to IEC61000-4-5. 2.4 Device Electrical Specifications If not specified under conditions, the Min and Max ratings stated in the following table apply to the entire specified operating ratings of the device. Typ values stated are either by design or by production testing at 25 °C ambient. Table 2-4. Electrical Specifications Symbol Parameter Conditions Min Typ Max Units VPORT Port output VMAIN–VPORT_NEGx 0 57 V VTH POR threshold Internal or external 3.3 V supply 8 V IMAIN Main power supply current at operating mode. VMAIN = 55 V 14 mA VAUX5 5 V output voltage VAUX5–AGND 4.5 5 5.5 V VAUX3P3 Internal 3.3 V output voltage VAUX3P3–AGND 3 3.3 3.6 V IAUX3P3 3.3 V output current for application use Without external NPN 5 mA With external NPN transistor on VAUX5 30 mA VAUX3P3_IN 3.3 V input voltage VAUX3P3–AGND 3 3.3 3.6 V DVDD Digital 3.3 V input voltage DVDD–DGND 3 3.3 3.6 V PORTP Power-on reset DVDD trip point DVDD–DGND 2.575 2.775 2.975 V PORHYS Power-on reset DVDD hysteresis PORTP–DGND 0.2 0.25 0.3 V RCH_ON Total channel resistance Rds_on + Rsense + Rbonding 0.34 Ω PPWR Port power accuracy >90 W 2 % 2.5 Port Real-Time Protection Table 2-5. Port Real-Time Protection Symbol Parameter Conditions Min Typ Max Units TRISE Turn-on rise time From 10% to 90% of the voltage difference at the VPORT_NEGx in POWER_ON state from the beginning of POWER_UP 15 µs IINRUSH Output current in POWER_UP state CLOAD ≤ 180 µF1 400 425 450 mA TINRUSH Inrush time 65 ms PD69208T4/PD69204T4/PD69208M Electrical Specifications © 2020 Microchip Technology Inc. Datasheet DS00003428C-page 8 |
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