C−Series SiPM Sensors

www.onsemi.com

4

Sensor

Size

Units

Max.

Typ.

Min.

Overvoltage

Parameter (Note 1)

Microcell Size

3mm

20m

Capacitance (Note 9)

(fast terminal to cathode)

Vbr + 2.5 V

20

pF

35m

12

pF

50m

7

pF

6mm

35m

48

pF

1mm

10m, 20m, 35m

Temperature dependence of Vbr

21.5

mV/°C

3mm

20m, 35m, 50m

6mm

35m

1mm

10m, 20m, 35m

Temperature dependence of Gain (Note 10)

−0.8

%/°C

3mm

20m, 35m, 50m

6mm

35m

1mm

10m

Crosstalk

Vbr + 2.5 V

0.6

%

20m

3

%

35m

7

%

3mm

20m

3

%

35m

7

%

50m

10

%

6mm

35m

7

%

1mm

10m

Afterpulsing

Vbr + 2.5 V

0.2

%

20m

0.2

%

35m

0.2

%

3mm

20m

0.2

%

35m

0.2

%

50m

0.6

%

6mm

35m

0.2

%

1. All measurements made at 2.5 V overvoltage and 21°C unless otherwise stated.

2. Please consult the maximum current levels on page 6 when selecting the overvoltage to apply.

3. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of √I vs V, where I is the current and

V is the bias voltage.

4. The range where PDE > 1% at Vbr + 5.0 V.

5. Note that the PDE does not contain contributions from afterpulsing or crosstalk.

6. Dark current derived from dark count data as DC × M × q × (1 + CT), where DC is dark count, M is gain, q is the charge of an electron, and

CT is cross talk.

7. Measured as time to go from 10% to 90% of the peak amplitude.

8. RC charging time constant of the microcell (t)

9. Internal capacitance of the sensor. Typically add 2−3 pF for sensor in package. Listed by unique microcell size for each part version.

10.Quoted as the percentage change per degree C from the measured value at 21°C.