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VOT8121AB-T3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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VOT8121AB-T3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page VOT8121AB, VOT8121AD, VOT8121AG www.vishay.com Vishay Semiconductors Rev. 1.1, 29-Oct-2018 3 Document Number: 84918 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements (1) Static dV/dt Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 20 mA VF -1.2 1.4 V Reverse current VR = 3 V IR - - 10 μA OUTPUT Off-state current VDRM = 800 V IDRM -- 1 μA On-state voltage IT = 100 mA peak VTM -- 3 V Holding current IH - 400 - μA Critical rate of rise of off-state voltage dV/dt (1) 1000 - - V/μs COUPLER Trigger current VTM = 3 V IFT -- 10 mA SAFETY AND INSULATION RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification According to IEC 68 part 1 55 / 110 / 21 Comparative tracking index Insulation group IIIa CTI 175 Maximum rated withstanding isolation voltage According to UL 1577, t = 1 min VISO 5300 VRMS Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5, DIP-4, SMD-4 VIORM 890 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5, DIP-4, 400 mil VIORM 1140 Vpeak Isolation resistance Tamb = 25 °C, VIO = 500 V RIO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V RIO ≥ 1011 Ω Output safety power PSO 600 mW Input safety current ISI 400 mA Input safety temperature TS 175 °C Creepage distance DIP-4, SMD-4 ≥ 7mm Clearance distance ≥ 7mm Creepage distance DIP-4, 400 mil ≥ 8mm Clearance distance ≥ 8mm Insulation thickness DTI ≥ 0.4 mm |
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