NCL30076 datasheet(4/15 Pages) ONSEMI

Part #	NCL30076

Description	Quasi-Resonant Buck Controller for Precise Current Regulation and Wide Analog Dimming

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Manufacturer	ONSEMI [ON Semiconductor]

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NCL30076

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SPECIFICATIONS

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

VDD, DRV Pin Voltage Range

VMV(MAX)

−0.3 to 30

V

DIM, FB, CSZCD, BIAS Pin Voltage Range

VLV(MAX)

−0.3 to 5.5

V

Maximum Power Dissipation (TA < 50°C)

PD(MAX)

550

mW

Maximum Junction Temperature

TJ(max)

150

°C

Storage Temperature Range

TSTG

−55 to 150

°C

Junction−to−Ambient Thermal Impedance

RθJA

145

°C/W

ESD Capability, Human Body Model (Note 2)

ESDHBM

2

kV

ESD Capability, Charged Device Model (Note 2)

ESDCDM

1

kV

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

2. This device series incorporates ESD protection and is tested by the following methods:

− ESD Human Body Model per JEDEC Standard JESD22−A114

− ESD Charged Device Model per JEDEC Standard JESD22−C101

− Latch−up Current Maximum Rating

±100 mA per JEDEC Standard JESD78

RECOMMENDED OPERATING RANGES

Parameter

Symbol

Min

Max

Unit

Junction Temperature

TJ

−40

125

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (VDD = 15 V and TJ = −40~125°C unless otherwise specified)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

VDD SECTION

IC Turn−On Threshold Voltage

VDD(ON)

9.3

10.0

10.7

V

IC Turn−Off Threshold Voltage

VDD(OFF)

7.4

8.0

8.6

V

Startup Current

VDD = VDD(ON) − 1.6 V

IDD(ST)

−

250

400

mA

Operating Current

IDD(OP)

−

6.5

8.0

mA

Standby Current

IDD(SB)

−

200

300

mA

BIAS SECTION

BIAS Voltage

VBIAS

3.23

3.30

3.37

V

TJ = 25~100°C (Note 4)

3.25

3.30

3.35

DIM SECTION

DIM Voltage for 100% VREF

VDIM = 1.9 V

VDIM(REF−MAX)

1.755

1.80

1.845

V

DIM Voltage for 99% VREF

VDIM(MAX−EFF)

1.730

1.78

1.827

V

Standby Enabling DIM Voltage

VDIM(SB−ENA)

50

75

100

mV

Standby Disabling DIM Voltage

VDIM(SB−DIS)

60

100

140

mV

Standby Delay Time

tSB(DELAY)

9

10

11

ms

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