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APT30DQ120BCTG Datasheet(PDF) 2 Page - Thinki Semiconductor Co., Ltd. |
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APT30DQ120BCTG Datasheet(HTML) 2 Page - Thinki Semiconductor Co., Ltd. |
2 / 5 page © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5 Rev.11T APT30DQ120BCT/APT30DQ120BCTG DYNAMIC CHARACTERISTICS THERMAL AND MECHANICAL CHARACTERISTICS 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 Peak T J = P DM x Z θJC + TC Duty Factor D = t1/t 2 t2 t1 Note : D = 0.9 Symbol Characteristic Test Conditions MIN TYP MAX UNIT t rr Reverse Recovery Time I F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C - 26 ns t rr Reverse Recovery Time I F = 30A, diF/dt = -200A/μs V R = 800V, TC = 25°C - 320 Q rr Reverse Recovery Charge - 545 nC I RRM Maximum Reverse Recovery Current - 4- Amps t rr Reverse Recovery Time I F = 30A, diF/dt = -200A/μs V R = 800V, TC = 125°C - 435 ns Q rr Reverse Recovery Charge - 2100 nC I RRM Maximum Reverse Recovery Current - 9- Amps t rr Reverse Recovery Time I F = 30A, diF/dt = -1000A/μs V R = 800V, TC = 125°C - 180 ns Q rr Reverse Recovery Charge - 2975 nC I RRM Maximum Reverse Recovery Current - 28 Amps Symbol Characteristic MIN TYP MAX UNIT R θJC Junction-to-Case Thermal Resistance .80 °C/W W T Package Weight 0.22 oz 5.9 g Torque Maximum Mounting Torque 10 lb•in 1.1 N•m |
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