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APT30DQ120BCTG Datasheet(PDF) 2 Page - Thinki Semiconductor Co., Ltd.

Part # APT30DQ120BCTG
Description  2*30A/1200V Heatsink Dual Cathode Common Ultra Fast Recovery Rectifiers
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

APT30DQ120BCTG Datasheet(HTML) 2 Page - Thinki Semiconductor Co., Ltd.

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© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 2/5
Rev.11T
APT30DQ120BCT/APT30DQ120BCTG
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T J = P DM x Z θJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note :
D = 0.9
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
t
rr
Reverse Recovery Time I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
26
ns
t
rr
Reverse Recovery Time
I
F = 30A, diF/dt = -200A/μs
V
R = 800V, TC = 25°C
-
320
Q
rr
Reverse Recovery Charge
-
545
nC
I
RRM
Maximum Reverse Recovery Current
-
4-
Amps
t
rr
Reverse Recovery Time
I
F = 30A, diF/dt = -200A/μs
V
R = 800V, TC = 125°C
-
435
ns
Q
rr
Reverse Recovery Charge
-
2100
nC
I
RRM
Maximum Reverse Recovery Current
-
9-
Amps
t
rr
Reverse Recovery Time
I
F = 30A, diF/dt = -1000A/μs
V
R = 800V, TC = 125°C
-
180
ns
Q
rr
Reverse Recovery Charge
-
2975
nC
I
RRM
Maximum Reverse Recovery Current
-
28
Amps
Symbol
Characteristic
MIN
TYP
MAX
UNIT
R
θJC
Junction-to-Case Thermal Resistance
.80
°C/W
W
T
Package Weight
0.22
oz
5.9
g
Torque
Maximum Mounting Torque
10
lb•in
1.1
N•m


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