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SSM4435M Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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SSM4435M Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
3 / 9 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 25 30 01 2 3 45 VDS - Drain-to-Source Voltage (V) VGS =10 V thru 4 V VGS =3 V VGS = 2V 0.010 0.01 5 0.0 20 0.0 25 0.0 30 0.0 35 0.0 40 0 5 10 15 20 25 30 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 04 8 12 16 20 24 Qg - Total Gate Charge (nC) ID =7A VDS =15 V VDS =24 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 300 600 900 1200 1500 1800 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS = - 4.5 V,ID =-7 A VGS =- 10 V,ID =- 5.6 A E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSM4435M 3 |
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