SSM4435M datasheet(1/9 Pages) VBSEMI

Part #	SSM4435M

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

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P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET

® Power MOSFET

• 100 % Rg Tested

APPLICATIONS

•

Load Switch

•

Battery Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

- 30

0.0

18 at VGS = - 10 V

- 9.0

13 nC

0.0

24 at VGS = - 4.5 V

-

7.8

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 95 °C/W.

d. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 9.0

A

TC = 70 °C

- 7.2

TA = 25 °C

- 7.0a, b

TA = 70 °C

- 5.6a, b

Pulsed Drain Current

IDM

- 30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 3.5

TA = 25 °C

- 2.1a, b

Maximum Power Dissipation

TC = 25 °C

PD

4.2

W

TC = 70 °C

2.7

TA = 25 °C

2.5a, b

TA = 70 °C

1.6a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

40

50

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

24

30

S

G

D

P-Channel MOSFET

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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