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SSM4435M Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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SSM4435M Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page  TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 TJ = 150 °C VSD -Source-to-Drain Voltage (V) TJ = 25 °C 1.1 1.3 1.5 1.7 1.9 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 04 8 12 16 20 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =7A 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 Time (s) Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 100 ms 1s 10 s DC Limited byRDS(on)* BVDSS Limited 10 ms 1ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSM4435M 4 |
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