US5U30

Transistor

1/4

Small switching (–20V, –1.5A)

US5U30

Features

External dimensions (Unit : mm)

1) The US5U30 conbines Pch MOSFET with a

Schottky barrier diode in a single TSMT5 package.

2) Pch MOSFET have a low on-state resistance

with a fast switching.

3) Pch MOSFET is reacted a low voltage drive(2.5V)

4) The Independently connected Schottky barrier diode

have a low forward voltate.

Applications

Load switch, DC/DC conversion

Structure

Equivalent circuit

Silicon P-channel MOSFET

Schottky Barrier DIODE

Packaging specifications

US5U30

TR

3000

Type

Package

Code

Taping

Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25

°C)

Drain current

< Di >

< MOSFET AND Di >

< MOSFET >

Source current

(Body diode)

Parameter

Symbol

W/TOTAL/MOUNTED ON

A CERAMIC BOARD

Drain

−source voltage

V

−20

Gate

−source voltage

V

±12

Continuous

A

±1

Repetitive peak reverse voltage

V

25

Reverse voltage

V

20

Forward current

A

0.5

Forward current surge peak

60HZ / 1CYC.

A

2

Total power dissipation

1.0

Limits

Unit

Continuous

−0.4

A

Pulsed

−4

PW 10

µs DUTY CYCLE 1%

A

Pulsed

±4

A

PW 10

µs DUTY CYCLE 1%

Channel temperature

Tch

150

C

Junction temperature

Tj

150

C

Range of storage temperature

Tstg

−55 to 150

C

0.15Max.

(2)

(1)

(3)

(5)

(4)

1.7

0.2

0.2

2.1

Abbreviated symbol : U30

Each lead has same dimensions

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

∗1 ESD protection diode

∗2 Body diode

∗2

∗1

(1)

(2)

(5)

(3)

(4)