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US5U30 Datasheet(PDF) 2 Page - Rohm |
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US5U30 Datasheet(HTML) 2 Page - Rohm |
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2 / 5 page  US5U30 Transistor 2/4 Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS Yfs µAVGS=±12V, VDS=0V VDD −15V VDD −15V Unit Conditions V(BR) DSS VID= −1mA, VGS=0V IDSS µAVDS=−20V, VGS=0V VGS (th) VVDS= −10V, ID=−1mA m Ω ID=−1A, VGS=−4.5V RDS (on) m Ω ID=−1A, VGS=−4V m Ω ID=−0.5A, VGS=−2.5V SVDS= −10V, ID=−0.5A Ciss pF VDS= −10V Coss pF VGS=0V Crss pF f=1MHz td (on) ns ID= −0.5A tr ns td (off) ns VGS= −4.5V tf ns RL=30 Ω Qg nC RG=10 Ω RL=15 Ω RG=10 Ω Qgs − Typ. − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 nC VGS= −4.5V Qgd Min. − −20 − −0.7 − − − 0.7 − − − − − − − − − − ±10 Max. − −1 −2.0 390 430 800 − − − − − − − − − − − nC ID= −1A ∗ ∗ ∗ ∗ ∗ ∗ Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed <MOSFET> −− 0.36 V IF=0.1A −− 0.47 V IF=0.5A IR −− 100 µAVR=20V VSD −− −1.2 V IS= −0.4A, VGS=0V Forward voltage Reverse leakage Parameter Symbol Min. Typ. Max. Unit Conditions <MOSFET> VF Forward voltage drop Parameter Symbol Min. Typ. Max. Unit Conditions <Di> |
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