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TJR1441 Datasheet(PDF) 13 Page - NXP Semiconductors |
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TJR1441 Datasheet(HTML) 13 Page - NXP Semiconductors |
13 / 31 page NXP Semiconductors TJR1441 High-speed CAN transceiver TJR1441 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved. Product data sheet Rev. 1 — 7 September 2020 13 / 31 8 Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to pin GND, unless otherwise specified. Symbol Parameter Conditions Min Max Unit -0.3 +6 V on pins VCC, VIO (TJR1441A), TXD, S (TJR1441A/B), OFF (TJR1441D), S_N (TJR1441D) - +7[2] on pins CANH, CANL -36 +40 V on pins RXD TJR1441A -0.3 VIO+0.3[3] V Vx voltage on pin x[1] TJR1441B, TJR1441D -0.3 VCC+0.3[3] V V(CANH-CANL) voltage between pin CANH and pin CANL -40 +40 V on pins CANH, CANL [4] pulse 1 -100 - V pulse 2a - +75 V pulse 3a -150 - V Vtrt transient voltage pulse 3b - +100 V IEC 61000-4-2 (150 pF, 330 Ω discharge circuit) [5] on pins CANH, CANL -8 +8 kV Human Body Model (HBM) on any pin [6] -4 +4 kV on pins CANH, CANL [7] -8 +8 kV Charged Device Model (CDM) [8] on corner pins -750 +750 V VESD electrostatic discharge voltage on any other pin -500 +500 V Tvj virtual junction temperature [9] -40 +175 °C Tstg storage temperature -55 +150 °C [1] The device can sustain voltages up to the specified values over the product lifetime, provided applied voltages (including transients) never exceed these values. [2] The device can withstand voltages between 6 V and 7 V for a total of 20 s over the product lifetime. [3] Subject to the qualifications detailed in Table notes 1 and 2 above for pins VCC, VIO, TXD, S, OFF, and S_N. [4] Verified by an external test house according to IEC TS 62228, Section 4.2.4; parameters for standard pulses defined in ISO7637. [5] Verified by an external test house according to IEC TS 62228, Section 4.3. [6] According to AEC-Q100-002. [7] Pins stressed to reference group containing all ground and supply pins, emulating the application circuits (Figure 11, Figure 12 and Figure 13). HBM pulse as specified in AEC-Q100-002 used. [8] According to AEC-Q100-011. [9] In accordance with IEC 60747-1. An alternative definition of virtual junction temperature is: Tvj = Tamb + P # Rth(j-a), where Rth(j-a) is a fixed value used in the calculation of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (P) and ambient temperature (Tamb). |
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