MCR100-8S datasheet(1/3 Pages) FS

Part #	MCR100-8S

Description	Silicon Planar PNPN Thyristor

PDF	3 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 3 page

SEMICONDUCTOR

TECHNICAL DATA

MCR100-8S

2015. 12. 06

1/3

Revision No : 0

Silicon Planar PNPN Thyristor

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

0.6

A

VDRM

V

Tj

Junction Temperature

-40 ~ 125

℃

Tstg

Storage Temperature

-40 ~ 150

℃

DESCRIPTION

Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits

and other low power gate trigger circuits.

FEATURES

Blocking voltage to 600V

RMS on-state current to 0.6A

General purpose switching

APPLICATIONS

General purpose switching

Phase control applications

Solid state relays

SOT-23

1.CATHODE

2.GATE

3.ANODE

600

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

On state voltage

VTM

ITM=0.6A

1.7

V

Gate trigger voltage

VGT

VAK=7V

0.8

V

Repetiti ve peak off-state voltage

IDRM= 10µA

600

V

Holdin g current

IH

IT=600mA , IG=60V

5

mA

5

45

µA

Gate trigger current

IGT

VAK=7V

VDRM

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MCR100-8S Datasheet(PDF) 1 Page - First Silicon Co., Ltd

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