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W25Q16JVSSIQ Datasheet(PDF) 63 Page - Winbond

Part # W25Q16JVSSIQ
Description  3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
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Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond

W25Q16JVSSIQ Datasheet(HTML) 63 Page - Winbond

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W25Q16JV
Publication Release Date: March 22, 2018, 2018
- 62 -
Revision G
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without ID Read
tRES1(2)
3
µs
/CS High to Standby Mode with ID Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
/CS High to next Instruction after Reset
tRST(2)
30
µs
/RESET pin Low period to reset the device
tRESET(2)
1(4)
µs
Write Status Register Time
tW
10
15
ms
Page Program Time
tPP
0.4
3
ms
Sector Erase Time (4KB)
tSE
45
400
ms
Block Erase Time (32KB)
tBE1
120
1,600
ms
Block Erase Time (64KB)
tBE2
150
2,000
ms
Chip Erase Time
tCE
5
25
s
Notes:
1.
Clock high or Clock low must be more than or equal to 45%Pc. Pc=1/fC(
MAX
)
2.
Value guaranteed by design and/or characterization, not 100% tested in production.
3.
It
’s possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to ensure
reliable operation.
4.
Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V, 25% driver
strength.
5.
4-bytes address alignment for Quad Read, start address from [A1,A0]=(0,0).


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