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W25Q16JVSSIQ Datasheet(PDF) 38 Page - Winbond |
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W25Q16JVSSIQ Datasheet(HTML) 38 Page - Winbond |
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38 / 75 page  W25Q16JV - 37 - 64KB Block Erase (D8h) The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0). The Block Erase instruction sequence is shown in Figure 33. The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits or the Individual Block/Sector Locks. Figure 33. 64KB Block Erase Instruction /CS CLK DI (IO 0) DO (IO 1) Mode 0 Mode 3 0 1 2 3 4 5 6 7 Instruction (D8h) High Impedance 8 9 29 30 31 24-Bit Address 23 22 2 1 0 * Mode 0 Mode 3 = MSB * |
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