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LP8866S-Q1 Datasheet(PDF) 15 Page - Texas Instruments

Part # LP8866S-Q1
Description  LP8866S-Q1 Automotive Display LED-backlight Driver with Six 150-mA Channels
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LP8866S-Q1 Datasheet(HTML) 15 Page - Texas Instruments

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– Optionally, the BST_SYNC can be tied to VDD to enable the boost spread spectrum function or tied to
GND to disable it.
• ISET pin to set the maximum LED current level per string.
7.3.2 Function Setting
Device parameter setting includes:
• BST_FSET pin is used to set the boost switching frequency through a resistor to signal ground.
• PWM_FSET pin is used to set the LED output PWM dimming frequency through a resistor to signal ground.
• MODE pin is used to set the dimming mode via an external resistor to signal ground.
• LED_SET pin is used to set the LED configuration through a resistor to signal ground.
• ISET pin is used to set the maximum LED current level per OUTx pin.
7.3.3 Device Supply (VDD)
All internal analog and digital blocks of LP8866S-Q1 are biased from external supply from VDD pin. Either a
typical 5-V or 3.3-V supply rail is able to supply VDD from previous linear regulator or DC/DC converter with at
least 150-mA current capability.
7.3.4 Enable (EN)
The LP8866S-Q1 only turns on when the input voltage of EN pin is above the voltage threshold (VENIH) and
turns off when the voltage of EN pin is below the threshold (VENIL). All analog and digital blocks start operating
once the LP8866S-Q1 is enabled by asserting EN pin. The SD pin is floating, I2C interface and Fault detection
are not active if the EN pin is de-asserted.
7.3.5 Charge Pump
An integrated regulated charge pump can be used to supply the gate drive for the external FET of the boost
controller. The charge pump is enabled or disabled by automatically detecting whether VDD and CPUMP pin are
connected together. If VDD is < 4.5 V then use the charge pump to generate a 5-V gate voltage to drive the
external boost switching FET. To use the charge pump, a 2.2-µF capacitor is placed between C1N and C1P. If
the charge pump is not required, C1N and C1P could be left unconnected and CPUMP pins tied to VDD. A 4.7-
µF CPUMP capacitor is used to store energy for the gate driver. The CPUMP capacitor is required to be used in
both charge pump enabled and disabled conditions and must be placed as close as possible to the CPUMP
pins. Figure 7-1and Figure 7-2 show required connections for both use cases.
L
FB
VDD
ISNSGND
COUT
ISNS
GD
CIN
C1N
C1P
CPUMP
SD
PGND
VOUT
3.3V
VSENSE_P
VIN
VSENSE_N
3 to 48V
VDD
CVDD
CPUMP
CFLY
Figure 7-1. Charge Pump Enabled Circuit
www.ti.com
LP8866S-Q1
SNVSBD1A – AUGUST 2020 – REVISED FEBRUARY 2021
Copyright © 2021 Texas Instruments Incorporated
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