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LP8866S-Q1 Datasheet(PDF) 8 Page - Texas Instruments

Part # LP8866S-Q1
Description  LP8866S-Q1 Automotive Display LED-backlight Driver with Six 150-mA Channels
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LP8866S-Q1 Datasheet(HTML) 8 Page - Texas Instruments

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6.4 Thermal Information
THERMAL METRIC(1)
Device
UNIT
HTTSOP
38-PIN
RθJA
Junction-to-ambient thermal resistance(2)
32.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
19.5
RθJB
Junction-to-board thermal resistance
8.8
ΨJT
Junction-to-top characterization parameter
0.3
ΨJB
Junction-to-board characterization parameter
8.9
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.7
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2)
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design.
6.5 Electrical Characteristics
Limits apply over the full operation temperature range –40°C ≤TA ≤ +125°C , unless otherwise speicified. VIN = 12 V, VDD =
3.3 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
General Electrical Characteristics
IQ
Shutdown mode current, VDD pin
EN = L
1
5
µA
IQ
Active mode current, VDD pin(1)
FSW = 303kHz, PWM = H, BOOST-FET
IPD25N06S4L-30, Charge Pump
Disabled
15
65
mA
IQ
Active mode current, VDD pin(1)
FSW = 2200kHz, PWM = H, BOOST-FET
IPD25N06S4L-30, Charge Pump
Disabled
40
75
mA
IQ
Active mode current, VDD pin(1)
FSW = 303kHz, PWM = H, BOOST-FET
IPD25N06S4L-30, Charge Pump Enabled
20
91
mA
IQ
Active mode current, VDD pin(1)
FSW = 2200kHz, PWM = H, BOOST-FET
IPD25N06S4L-30, Charge Pump Enabled
65
104
mA
CPUMP and LDO Electrical Characteristics
VCPUMP
Voltage accuracy
VDD = 3.0 to 3.6 V; ILOAD = 1 to 50 mA
4.8
5
5.2
V
fCP
CP switching frequency
387
417
447
kHz
VCPUMP_
UVLO
VCPUMP UVLO threshold
VCPUMP falling edge
3.95
4.2
4.4
V
VCPUMP_
UVLO
VCPUMP UVLO threshold
VCPUMP rising edge
4.15
4.4
4.6
V
VCPUMP_
HYS
VCPUMP UVLO hysteresis
0.1
0.2
V
TSTART_U
P
Charge pump startup time
CCPUMP = 10 µF
1000
2000
µs
Protection Electrical Characteristics
VDDUVLO
_F
VDD UVLO threshold
VDD falling
2.68
2.8
2.92
V
VDDUVLO
_R
VDD UVLO threshold
VDD rising
3.0
V
VDDUVLO
_H
VDD UVLO hysteresis
0.1
V
VINUVLO_
TH
UVLO pin threshold
VUVLO falling
0.753
0.777
0.801
V
IUVLO
UVLO pin bias current
VUVLO = VUVLO_TH + 50 mV
–5
µA
LP8866S-Q1
SNVSBD1A – AUGUST 2020 – REVISED FEBRUARY 2021
www.ti.com
8
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: LP8866S-Q1


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