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LP8866S-Q1 Datasheet(PDF) 8 Page - Texas Instruments |
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LP8866S-Q1 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 82 page 6.4 Thermal Information THERMAL METRIC(1) Device UNIT HTTSOP 38-PIN RθJA Junction-to-ambient thermal resistance(2) 32.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 19.5 RθJB Junction-to-board thermal resistance 8.8 ΨJT Junction-to-top characterization parameter 0.3 ΨJB Junction-to-board characterization parameter 8.9 RθJC(bot) Junction-to-case (bottom) thermal resistance 2.7 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design. 6.5 Electrical Characteristics Limits apply over the full operation temperature range –40°C ≤TA ≤ +125°C , unless otherwise speicified. VIN = 12 V, VDD = 3.3 V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT General Electrical Characteristics IQ Shutdown mode current, VDD pin EN = L 1 5 µA IQ Active mode current, VDD pin(1) FSW = 303kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Disabled 15 65 mA IQ Active mode current, VDD pin(1) FSW = 2200kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Disabled 40 75 mA IQ Active mode current, VDD pin(1) FSW = 303kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Enabled 20 91 mA IQ Active mode current, VDD pin(1) FSW = 2200kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Enabled 65 104 mA CPUMP and LDO Electrical Characteristics VCPUMP Voltage accuracy VDD = 3.0 to 3.6 V; ILOAD = 1 to 50 mA 4.8 5 5.2 V fCP CP switching frequency 387 417 447 kHz VCPUMP_ UVLO VCPUMP UVLO threshold VCPUMP falling edge 3.95 4.2 4.4 V VCPUMP_ UVLO VCPUMP UVLO threshold VCPUMP rising edge 4.15 4.4 4.6 V VCPUMP_ HYS VCPUMP UVLO hysteresis 0.1 0.2 V TSTART_U P Charge pump startup time CCPUMP = 10 µF 1000 2000 µs Protection Electrical Characteristics VDDUVLO _F VDD UVLO threshold VDD falling 2.68 2.8 2.92 V VDDUVLO _R VDD UVLO threshold VDD rising 3.0 V VDDUVLO _H VDD UVLO hysteresis 0.1 V VINUVLO_ TH UVLO pin threshold VUVLO falling 0.753 0.777 0.801 V IUVLO UVLO pin bias current VUVLO = VUVLO_TH + 50 mV –5 µA LP8866S-Q1 SNVSBD1A – AUGUST 2020 – REVISED FEBRUARY 2021 www.ti.com 8 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: LP8866S-Q1 |
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Similar Description - LP8866S-Q1_V01 |
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