SP8K22 datasheet(3/5 Pages) ROHM

Part #	SP8K22

Description	Switching (45V, 4.5A)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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3 / 5 page

SP8K22

Transistor

3/4

Electrical characteristic curves

Fig.2 Static Drain-Source On-State

Resistance vs. Drain Current (1)

Fig.1 Typical Transfer Characteristics

Fig.3 Static Drain-Source On-State

Resistance vs. Drain Current (2)

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current (3)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Fig.6 Source-Current vs.

Source-Drain Voltage

Fig.7 Typical capacitance vs.

Source-Drain Voltage

Fig.8 Switching Characteristics

Fig.9 Dynamic Input Characteristics

0.01

0.1

1

10

1.0

1.5

2.0

2.5

3.0

3.5

Gate-Source Voltage : VGS [V]

VDS=10V

pulsed

Ta=125

o

C

　　　75

oC

　　　25

oC

　　-25

o

C

1

10

100

1000

0.01

0.1

1

10

Drain Current : I

D [A]

VGS=10V

pulsed

Ta=125

o

C

75

oC

25

oC

-25

o

C

1

10

100

1000

0.01

0.1

1

10

Drain Current : I

D [A]

V

GS=4.5V

pulsed

Ta=125

oC

75

oC

25

oC

-25

oC

1

10

100

1000

0.01

0.1

1

10

Drain Current : I

D [A]

V

GS=4V

pulsed

Ta=125

oC

75

oC

25

oC

-25

oC

0

50

100

150

200

05

10

15

Gate-Source Voltage : V

GS [V]

ID=2.25A

ID=4.5A

Ta=25

oC

pulsed

7

0.01

0.1

1

10

00.5

1

1.5

Source-Drain Voltage : V

SD [V]

V

GS=0V

pulsed

Ta=125

oC

75

oC

25

oC

-25

oC

10

100

1000

10000

0.01

0.1

1

10

100

Drain-Source Voltage : V

DS [V]

Ta=25

oC

f=1MHz

V

GS=0V

Ciss

Coss

Crss

1

10

100

1000

10000

0.01

0.1

1

10

Drain Current : I

D [A]

Ta=25

oC

V

DD=25V

V

GS=10V

R

G=10Ω

Pulsed

td(on)

tr

td(off)

tf

0

2

4

6

8

10

02

46

8

10

12

Total Gate Charge : Qg [nC]

Ta=25

oC

V

DD=25V

I

D=4.5A

R

G=10Ω

Pulsed

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