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STK5006P Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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STK5006P Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
2 / 3 page ![]() www.doingter.cn — 2 — Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=70A --- 18 22 mΩ Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1050 1365 pF Coss Output Capacitance --- 460 600 Crss Reverse Transfer Capacitance --- 70 90 Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=25A, RGEN=25Ω. --- 20 50 ns tr Rise Time --- 100 210 ns td(off) Turn-Off Delay Time --- 80 170 ns tf Fall Time --- 85 180 ns Qg Total Gate Charge VGS=10V, VDS=48V,ID=50A --- 32 42 nC STK5006P |
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