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NP32N055HLE Datasheet(PDF) 1 Page - NEC |
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NP32N055HLE Datasheet(HTML) 1 Page - NEC |
1 / 8 page ![]() © 1999 MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14137EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 m Ω MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 m Ω MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±32 A Drain Current (Pulse) Note1 ID(pulse) ±100 A Total Power Dissipation (TA = 25°C) PT 1.2 W Total Power Dissipation (TC = 25°C) PT 66 W Single Avalanche Current Note2 IAS 28 / 21 / 8 A Single Avalanche Energy Note2 EAS 7.8 / 44 / 64 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Rth(ch-C) 2.27 °C/W Channel to Ambient Rth(ch-A) 125 °C/W ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HLE TO-251 NP32N055ILE TO-252 The mark 5 shows major revised points. (TO-251) (TO-252) |
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