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NP32N055HLE Datasheet(PDF) 2 Page - NEC

Part # NP32N055HLE
Description  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NP32N055HLE Datasheet(HTML) 2 Page - NEC

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Data Sheet D14137EJ3V0DS
2
NP32N055HLE, NP32N055ILE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 16 A
19
24
m
RDS(on)2
VGS = 5.0 V, ID = 16 A
22
29
m
RDS(on)3
VGS = 4.5 V, ID = 16 A
24
33
m
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
µA
1.522.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 16 A
8
16
S
Drain Leakage Current
IDSS
VDS = 55 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
1300
2000
pF
Output Capacitance
Coss
180
270
pF
Reverse Transfer Capacitance
Crss
90
160
pF
Turn-on Delay Time
td(on)
ID = 16 A, VGS(on) = 10 V, VDD = 28 V,
14
31
ns
Rise Time
tr
RG = 1
820
ns
Turn-off Delay Time
td(off)
40
81
ns
Fall Time
tf
7.4
19
ns
Total Gate Charge
QG1
ID = 32 A, VDD = 44 V, VGS = 10 V
27
41
nC
QG2
ID = 32 A, VDD = 44 V, VGS = 5.0 V
15
23
nC
Gate to Source Charge
QGS
5nC
Gate to Drain Charge
QGD
9nC
Body Diode Forward Voltage
VF(S-D)
IF = 32 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 32 A, VGS = 0 V, di/dt = 100 A/
µs41
ns
Reverse Recovery Charge
Qrr
58
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 µs
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10 %
0
0
90 %
90 %
90 %
VGS(on)
VDS
ton
toff
td(on)
tr
td(off)
tf
10 %10 %


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