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NP32N055HLE Datasheet(PDF) 2 Page - NEC |
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NP32N055HLE Datasheet(HTML) 2 Page - NEC |
2 / 8 page Data Sheet D14137EJ3V0DS 2 NP32N055HLE, NP32N055ILE ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 16 A 19 24 m Ω RDS(on)2 VGS = 5.0 V, ID = 16 A 22 29 m Ω RDS(on)3 VGS = 4.5 V, ID = 16 A 24 33 m Ω Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.522.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 16 A 8 16 S Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 1300 2000 pF Output Capacitance Coss 180 270 pF Reverse Transfer Capacitance Crss 90 160 pF Turn-on Delay Time td(on) ID = 16 A, VGS(on) = 10 V, VDD = 28 V, 14 31 ns Rise Time tr RG = 1 Ω 820 ns Turn-off Delay Time td(off) 40 81 ns Fall Time tf 7.4 19 ns Total Gate Charge QG1 ID = 32 A, VDD = 44 V, VGS = 10 V 27 41 nC QG2 ID = 32 A, VDD = 44 V, VGS = 5.0 V 15 23 nC Gate to Source Charge QGS 5nC Gate to Drain Charge QGD 9nC Body Diode Forward Voltage VF(S-D) IF = 32 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 32 A, VGS = 0 V, di/dt = 100 A/ µs41 ns Reverse Recovery Charge Qrr 58 nC TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 τ = 1 µs Duty Cycle ≤ 1 % τ VGS Wave Form VDS Wave Form VGS VDS 10 % 0 0 90 % 90 % 90 % VGS(on) VDS ton toff td(on) tr td(off) tf 10 %10 % |
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