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TIP140 Datasheet(PDF) 4 Page - ON Semiconductor |
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TIP140 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 4 Motorola Bipolar Power Transistor Device Data ACTIVE–REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. At high case temper- atures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25°C Figure 6. Active–Region Safe Operating Area dc VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 10 10 0.2 5.0 20 1.0 20 TJ = 150°C 50 30 TIP140, 145 3.0 7.0 15 70 100 TIP141, 146 TIP142, 147 15 10 1.0 2.0 5.0 7.0 Figure 7. Unclamped Inductive Load L, UNCLAMPED INDUCTIVE LOAD (mH) 0.5 1.0 2.0 5.0 10 20 50 100 100 mJ INPUT MPS–U52 50 50 RBB1 1.5 k RBB2 = 100 VBB2 = 0 VBB1 = 10 V TUT VCE MONITOR 100 mH VCC = 20 V IC MONITOR RS = 0.1 TEST CIRCUIT NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities. INPUT VOLTAGE COLLECTOR CURRENT 1.42 A VCE(sat) – 20 V COLLECTOR VOLTAGE V(BR)CER w ≈ 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0 VOLTAGE AND CURRENT WAVEFORMS Figure 8. Inductive Load PNP NPN Figure 9. Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio f, FREQUENCY (MHz) 2.0 1.0 10 5.0 100 1.0 3.0 5.0 7.0 2.0 7.0 10 VCE = 10 V IC = 1.0 A TJ = 25°C 5.0 4.0 0 1.0 2.0 3.0 Figure 10. Free–Air Temperature Power Derating TA, FREE–AIR TEMPERATURE (°C) 0 40 80 120 160 200 20 50 70 PNP NPN |
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