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TIP140 Datasheet(PDF) 3 Page - ON Semiconductor

Part # TIP140
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP140 Datasheet(HTML) 3 Page - ON Semiconductor

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TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
3
Motorola Bipolar Power Transistor Device Data
5000
0.5
Figure 3. DC Current Gain versus Collector Current
IC, COLLECTOR CURRENT (AMPS)
300
1.0
2.0
3.0
5.0
7.0
10
500
VCE = 4.0 V
4.0
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
Figure 4. Collector–Emitter Saturation Voltage
5.0
–75
TJ, JUNCTION TEMPERATURE (°C)
0.5
IC = 10 A, IB = 4.0 mA
2.0
3.0
4.0
–75
TJ, JUNCTION TEMPERATURE (°C)
– 25
25
75
175
3.6
3.2
2.8
2.4
0.8
Figure 5. Base–Emitter Voltage
2000
1000
TJ = 150°C
25
°C
–55
°C
IC, COLLECTOR CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
125
20,000
1000
2000
3000
5000
10,000
7000
1.0
0.7
0.5
0.5
1.0
2.0
3.0
5.0
7.0
10
4.0
0.7
– 50
– 25
0
25
50
75
100
125
150
175
5.0
–75
2.0
3.0
1.0
0.7
– 50
– 25
0
25
50
75
100
125
150
175
2.0
1.6
1.2
4.0
– 75
– 25
25
75
175
3.6
3.2
2.8
2.4
0.8
125
2.0
1.6
1.2
100
°C
TJ = 150°C
100
°C
25
°C
–55
°C
VCE = 4.0 V
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
TYPICAL CHARACTERISTICS


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