TIP100 datasheet(4/6 Pages) ONSEMI

Part #	TIP100

Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	ONSEMI [ON Semiconductor]

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TIP100 TIP101 TIP102 TIP105 TIP106 TIP107

4

Motorola Bipolar Power Transistor Device Data

20,000

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200

0.2

0.3

0.5

1.0

2.0

10

500

1000

300

2000

3000

VCE = 4.0 V

0.7

3.0

NPN

TIP100, TIP101, TIP102

PNP

TIP105, TIP106, TIP107

Figure 9. Collector Saturation Region

3.0

0.3

IB, BASE CURRENT (mA)

1.0

0.5

1.0

2.0

10

30

1.8

IC = 2.0 A

TJ = 25°C

4.0 A

2.2

2.6

0.7

5.0

3.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3

0.5

1.0

2.0

5.0

10

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

Figure 10. “On” Voltages

VBE @ VCE = 4.0 V

3.0

10,000

5000

TJ = 150°C

25

°C

– 55

°C

20

IC, COLLECTOR CURRENT (AMP)

VCE = 4.0 V

TJ = 150°C

25

°C

– 55

°C

1.4

6.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

5.0 7.0

20,000

0.1

200

0.2

0.3

0.5

1.0

2.0

10

500

1000

300

2000

3000

0.7

3.0

10,000

5000

5.0 7.0

7000

700

3.0

7.0

3.0

0.3

1.0

0.5

1.0

2.0

10

30

1.8

2.2

2.6

0.7

5.0

20

1.4

3.0

7.0

IC = 2.0 A

4.0 A

6.0 A

0.7

7.0

3.0

0.1

0.2 0.3

0.5

1.0

2.0

5.0

10

2.5

2.0

1.5

1.0

0.5

3.0

0.7

7.0

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