TIP100 datasheet(2/6 Pages) ONSEMI

Part #	TIP100

Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	ONSEMI [ON Semiconductor]

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TIP100 TIP101 TIP102 TIP105 TIP106 TIP107

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP100, TIP105

TIP101, TIP106

TIP102, TIP107

VCEO(sus)

60

80

100

—

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP100, TIP105

(VCE = 40 Vdc, IB = 0)

TIP101, TIP106

(VCE = 50 Vdc, IB = 0)

TIP102, TIP107

ICEO

—

50

µAdc

Collector Cuttoff Current

(VCB = 60 Vdc, IE = 0)

TIP100, TIP105

(VCB = 80 Vdc, IE = 0)

TIP101, TIP106

(VCB = 100 Vdc, IE = 0)

TIP102, TIP107

ICBO

—

50

µAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

8.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 8.0 Adc, VCE = 4.0 Vdc)

hFE

1000

200

20,000

—

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)

(IC = 8.0 Adc, IB = 80 mAdc)

VCE(sat)

—

2.0

2.5

Vdc

Base–Emitter On Voltage

(IC = 8.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

Cob

—

300

200

pF

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

Figure 2. Switching Times Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.5

0.05

0.2

0.3

0.5 0.7 1.0

2.0

3.0

10

0.3

0.7

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0 V

V2

approx

+ 8.0 V

V1

approx

–12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

µs

0

RB

51

D1

+ 4.0 V

VCC

– 30 V

RC

TUT

≈ 8.0 k ≈ 120

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

3.0

0.2

0.1

0.07

5.0 7.0

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