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K4H1G0438M-UC Datasheet(PDF) 15 Page - Samsung semiconductor

Part # K4H1G0438M-UC
Description  1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4H1G0438M-UC Datasheet(HTML) 15 Page - Samsung semiconductor

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DDR SDRAM
DDR SDRAM 1Gb M-die (x4, x8) Pb-Free
Revision 1.1 October, 2004
AC Timming Parameters & Specifications
Parameter
Symbol
B3
(DDR333@CL=2.5))
A2
(DDR266@CL=2.0)
B0
(DDR266@CL=2.5))
Unit
Note
Min
Max
Min
Max
Min
Max
Row cycle time
tRC
60
65
65
ns
Refresh row cycle time
tRFC
120
120
120
ns
Row active time
tRAS
42
70K
45
120K
45
120K
ns
RAS to CAS delay
tRCD
18
20
20
ns
Row precharge time
tRP
18
20
20
ns
Row active to Row active delay
tRRD
12
15
15
ns
Write recovery time
tWR
15
15
15
ns
Last data in to Read command
tWTR
1
1
1
tCK
Col. address to Col. address delay
tCCD
1
1
1
tCK
Clock cycle time
CL=2.0
tCK
7.5
12
7.5
12
10
12
ns
CL=2.5
6
127.5
12
7.512
ns
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQS-out access time from CK/CK
tDQSCK
-0.6
+0.6
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/
tAC
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data
tDQSQ
-
0.45
-
0.5
-
0.5
ns
12
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
3
DQS-in hold time
tWPRE
0.25
0.25
0.25
tCK
DQS falling edge to CK rising-setup
tDSS
0.2
0.2
0.2
tCK
DQS falling edge from CK rising-
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
tCK
DQS-in cycle time
tDSC
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Address and Control Input setup
tIS
0.75
0.9
0.9
ns
i,5.7~9
Address and Control Input hold
tIH
0.75
0.9
0.9
ns
i,5.7~9
Address and Control Input setup
tIS
0.8
1.0
1.0
ns
i, 6~9
Address and Control Input hold
tIH
0.8
1.0
1.0
ns
i, 6~9
Data-out high impedence time from
CK/CK
tHZ
+0.7
+0.75
+0.75
ns
1
Data-out low impedence time from
CK/CK
tLZ
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
1
Output Slew Rate Matching
tSLMR
0.67
1.5
0.67
1.5
0.67
1.5


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