K4H1G0438M-UC datasheet(14/23 Pages) SAMSUNG

Part #	K4H1G0438M-UC

Description	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

PDF	23 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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14 / 23 page

DDR SDRAM

DDR SDRAM 1Gb M-die (x4, x8) Pb-Free

Revision 1.1 October, 2004

Overshoot/Undershoot specification for Data, Strobe, and Mask Pins

Parameter

Specification

DDR333

DDR200/266

Maximum peak amplitude allowed for overshoot

TBD

1.2 V

Maximum peak amplitude allowed for undershoot

TBD

1.2 V

The area between the overshoot signal and VDD must be less than or equal to

TBD

2.4 V-ns

The area between the undershoot signal and GND must be less than or equal to

TBD

2.4 V-ns

5

4

3

2

1

0

-1

-2

-3

-4

-5

0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0

VDDQ

Overshoot

Maximum Amplitude = 1.2V

Area = 2.4V-ns

Maximum Amplitude = 1.2V

undershoot

GND

Tims(ns)

DQ/DM/DQS AC overshoot/Undershoot Definition

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