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K4H1G0438M-UC Datasheet(PDF) 13 Page - Samsung semiconductor |
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K4H1G0438M-UC Datasheet(HTML) 13 Page - Samsung semiconductor |
13 / 23 page ![]() DDR SDRAM DDR SDRAM 1Gb M-die (x4, x8) Pb-Free Revision 1.1 October, 2004 AC Operating Conditions Parameter/Condition Symbol Min Max-10 Unit Note Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ+0.6 V 1 Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 AC Overshoot/Undershoot specification for Address and Control Pins Parameter Specification DDR333 DDR200/266 Maximum peak amplitude allowed for overshoot TBD 1.5 V Maximum peak amplitude allowed for undershoot TBD 1.5 V The area between the overshoot signal and VDD must be less than or equal to TBD 4.5 V-ns The area between the undershoot signal and GND must be less than or equal to TBD 4.5 V-ns 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.5 0.6875 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.3125 6.5 7.0 VDD Overshoot Maximum Amplitude = 1.5V Area = 4.5V-ns Maximum Amplitude = 1.5V undershoot GND Tims(ns) AC overshoot/Undershoot Definition Notes : 1. VID is the magnitude of the difference between the input level on CK and the input level on /CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same. |
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