![]() |
Electronic Components Datasheet Search |
|
K4H1G0438M-UC Datasheet(PDF) 11 Page - Samsung semiconductor |
|
|
K4H1G0438M-UC Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 23 page ![]() DDR SDRAM DDR SDRAM 1Gb M-die (x4, x8) Pb-Free Revision 1.1 October, 2004 IDD7A : Operating current: Four bank operation 1. Typical Case : Vdd = 2.5V, T=25’ C 2. Worst Case : Vdd = 2.7V, T= 10’ C 3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not changing. lout = 0mA 4. Timing patterns - B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - B3(166Mhz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP < Detailed test conditions for DDR SDRAM IDD1 & IDD7A > IDD1 : Operating current: One bank operation 1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. lout = 0mA 2. Timing patterns - B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - B3(166Mhz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC = 10*tCK, tRAS=7*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP |
Similar Part No. - K4H1G0438M-UC |
|
Similar Description - K4H1G0438M-UC |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |