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K4H1G0438M-UC Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4H1G0438M-UC Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 23 page DDR SDRAM DDR SDRAM 1Gb M-die (x4, x8) Pb-Free Revision 1.1 October, 2004 Pin Description DM is internally loaded to match DQ and DQS identically. 1Gb TSOP-II Package Pinout Row & Column address configuration VDD 1 66Pin TSOPII (400mil x 875mil) DQ0 2 VDDQ 3 NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 BA0 20 CS 19 RAS 18 CAS 17 WE 16 NC 15 VDDQ 14 NC 13 VDD 27 A3 26 A2 25 A1 24 A0 23 AP/A10 22 BA1 21 VSS 54 DQ7 53 VSSQ 52 NC 51 DQ6 50 VDDQ 49 NC 48 DQ5 47 VSSQ 46 NC 45 DQ4 44 VDDQ 43 A11 35 36 CKE 37 CK 38 DM 39 VREF 40 VSSQ 41 NC 42 VSS 55 A4 56 A5 57 A6 58 A7 59 A8 60 A9 34 (0.65mm Pin Pitch) 33 32 31 30 29 28 61 62 63 64 65 66 NC NC A13 NC NC VDD NC DQS NC VSS CK NC A12 VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ A11 CKE CK DM VREF VSSQ NC VSS A4 A5 A6 A7 A8 A9 NC DQS NC VSS CK NC A12 VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ BA0 CS RAS CAS WE NC VDDQ NC VDD A3 A2 A1 A0 AP/A10 BA1 NC NC A13 NC NC VDD Bank Address BA0~BA1 Auto Precharge A10 Organization Row Address Column Address 256Mx4 A0~A13 A0-A9, A11, A12 128Mx8 A0~A13 A0-A9, A11 256Mb x 4 128Mb x 8 |
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