MPSA56 datasheet(2/8 Pages) ONSEMI

Part #	MPSA56

Description	Amplifier Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSA05, MPSA06, MPSA55, MPSA56

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 2.)

(IC = 1.0 mAdc, IB = 0)

MPSA05, MPSA55

MPSA06, MPSA56

V(BR)CEO

60

80

−

Vdc

Emitter − Base Breakdown Voltage (IE = 100 µAdc, IC = 0)

V(BR)EBO

4.0

−

Vdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

ICES

−

0.1

µAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

MPSA05, MPSA55

(VCB = 80 Vdc, IE = 0)

MPSA06, MPSA56

ICBO

−

0.1

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

100

−

Collector − Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.25

Vdc

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product (Note 3.)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

MPSA05

MPSA06

(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)

MPSA55

MPSA56

fT

100

50

−

MHz

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

3. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Switching Time Test Circuits

OUTPUT

TURN−ON TIME

−1.0 V

VCC

+40 V

RL

* CS t 6.0 pF

RB

100

Vin

5.0 mF

tr = 3.0 ns

0

+10 V

5.0 ms

OUTPUT

TURN−OFF TIME

+VBB

VCC

+40 V

RL

* CS t 6.0 pF

RB

100

Vin

5.0 mF

tr = 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

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