©

1999,2000

MOS FIELD EFFECT TRANSISTOR

NP34N055HHE, NP34N055IHE

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D14153EJ3V0DS00 (3rd edition)

Date Published

March 2001 NS CP(K)

Printed in Japan

The mark 5 shows major revised points.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

ORDERING INFORMATION

PART NUMBER

PACKAGE

NP34N055HHE

TO-251

NP34N055IHE

TO-252

DESCRIPTION

These products are N-Channel MOS Field Effect Tran-

sistors designed for high current switching applications.

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

• Built-in gate protection diode

Drain to Source Voltage

55

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±34

A

Drain Current (Pulse)

Note1

±136

A

1.2

W

88

W

Single Avalanche Current

Note2

34 / 27 / 10

A

Single Avalanche Energy

Note2

11 / 72 / 100

mJ

Channel Temperature

175

°C

Storage Temperature

–55 to + 175

°C

Notes 1. PW

≤ 10

µ s, Duty cycle ≤ 1 %

THERMAL RESISTANCE

Channel to Case

1.70

°C/W

Channel to Ambient

125

°C/W

(TO-251)

(TO-252)