Data Sheet D14153EJ3V0DS

6

NP34N055HHE, NP34N055IHE

PACKAGE DRAWINGS (Unit : mm)

1)TO-251 (MP-3)

2)TO-252 (MP-3Z)

5.0

±0.2

2.3

±0.2

0.5

±0.1

1.1

±0.2

6.5

±0.2

2.3 TYP.

2.3 TYP.

0.5

+0.2

−0.1

0.5

+0.2

−0.1

5.0

±0.2

0.5

±0.1

1.1

±0.2

0.9 MAX.

0.8 MAX.

0.8 TYP.

2.3 TYP.

2.3 TYP.

6.5

±0.2

2.3

±0.2

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain