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AM29LV800DB-120ED Datasheet(PDF) 37 Page - Advanced Micro Devices |
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AM29LV800DB-120ED Datasheet(HTML) 37 Page - Advanced Micro Devices |
37 / 51 page January 21, 2005 Am29LV800D_00_A4_E Am29LV800D 35 P R E L I M I NARY AC Characteristics Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Speed Options JEDEC Std Description -70 -90 -120 Unit tAVAV tWC Write Cycle Time (Note 1) Min 70 90 120 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 45 50 ns tDVWH tDS Data Setup Time Min 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 35 50 ns tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 8 µs Word Typ 16 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Min 90 ns |
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