2SK3569 datasheet(3/6 Pages) TOSHIBA

Part #	2SK3569

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 6 page

2SK3569

2004-03-04

3

0

2

4

6

8

10

8

20

Tc

= −55°C

25

100

12

16

4

0

6

8

10

0

ID = 10 A

4

8

12

16

20

2.5

5

4

2

0.1

1

10

100

1

10

VGS = 10 V､15V

0.1

10

100

0.1

1

100

25

100

Tc

= −55°C

1

10

6

4

0

8

2

0

2

4

6

8

VGS = 4V

4.2

4.6

4.4

4.8

5

6

10,8

10

5.1

5.3

16

12

8

4

0

20

0

20

50

VGS = 4 V

4.5

4.75

5

6

10

5.25

5.5

40

30

10

8

DRAIN-SOURCE VOLTAGE VDS

(V)

ID – VDS

COMMON SOURCE

Tc

= 25°C

PULSE TEST

DRAIN CURRENT ID (A)

RDS (ON) – ID

COMMON SOURCE

Tc

= 25°C

PULSE TEST

DRAIN CURRENT ID (A)

Yfs – ID

COMMON SOURCE

VDS = 20 V

PULSE TEST

DRAIN-SOURCE VOLTAGE VDS

(V)

ID – VDS

COMMON SOURCE

Tc

= 25°C

PULSE TEST

GATE-SOURCE VOLTAGE VGS

(V)

ID – VGS

COMMON SOURCE

VDS = 20 V

PULSE TEST

GATE-SOURCE VOLTAGE VGS

(V)

VDS – VGS

COMMON SOURCE

Tc

= 25℃

PULSE TEST

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2SK3569 Datasheet(PDF) 3 Page - Toshiba Semiconductor

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