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2SK3569 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3569 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page ![]() 2SK3569 2004-03-04 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ±10 µA Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 V Drain cut-off current IDSS VDS = 600 V, VGS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A 0.54 0.75 Ω Forward transfer admittance Yfs VDS = 10 V, ID = 5 A 0.7 8.5 S Input capacitance Ciss 1500 Reverse transfer capacitance Crss 15 Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 180 pF Rise time tr 22 Turn-on time ton 50 Fall time tf 36 Switching time Turn-off time toff 180 ns Total gate charge Qg 42 Gate-source charge Qgs 23 Gate-drain charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 10 A 19 nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 10 A Pulse drain reverse current (Note 1) IDRP 40 A Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V −1.7 V Reverse recovery time trr 1300 ns Reverse recovery charge Qrr IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/µs 16 µC Marking RL = 40 Ω 0 V 10 V VGS VDD ∼− 200 V ID = 5 A VOUT 50 Ω Duty <= 1%, tw = 10 µs ※ Lot Number ※ TYPE K3569 |
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