2SK3569 datasheet(2/6 Pages) TOSHIBA

Part #	2SK3569

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

PDF	6 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK3569

2004-03-04

2

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V



±10

µA

Gate-source breakdown voltage

V (BR) GSS

IG = ±10 µA, VDS = 0 V

±30



V

Drain cut-off current

IDSS

VDS = 600 V, VGS = 0 V



100

µA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

600



V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0



4.0

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 5 A



0.54

0.75

Ω

Forward transfer admittance

Yfs

VDS = 10 V, ID = 5 A

0.7

8.5



S

Input capacitance

Ciss



1500



Reverse transfer capacitance

Crss



15



Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz



180



pF

Rise time

tr



22



Turn-on time

ton



50



Fall time

tf



36



Switching time

Turn-off time

toff



180



ns

Total gate charge

Qg



42



Gate-source charge

Qgs



23



Gate-drain charge

Qgd

VDD ∼− 400 V, VGS = 10 V, ID = 10 A



19



nC

Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR



10

A

Pulse drain reverse current

(Note 1)

IDRP



40

A

Forward voltage (diode)

VDSF

IDR = 10 A, VGS = 0 V



−1.7

V

Reverse recovery time

trr



1300



ns

Reverse recovery charge

Qrr

IDR = 10 A, VGS = 0 V,

dIDR/dt = 100 A/µs



16



µC

Marking

RL =

40

Ω

0 V

10 V

VGS

VDD ∼− 200 V

ID = 5 A

VOUT

50

Ω

Duty <= 1%, tw = 10 µs

※ Lot Number

※

TYPE

K3569

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2SK3569 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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