2SK3569 datasheet(5/6 Pages) TOSHIBA

Part #	2SK3569

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 6 page

2SK3569

2004-03-04

5

500

400

300

200

100

0

25

50

75

100

125

150

0.01

10μ

0.1

1

10

100μ

1ｍ

10ｍ

100ｍ

1

10

T

PDM

t

Duty

= t/T

Rth (ch-c) = 2.78°C/W

Duty=0.5

0.2

0.1

0.05

0.02

0.01

0.001

0.1

1

10

100

10

1000

100

VDSS max

0.01

CHANNEL TEMPERATURE (INITIAL)

Tch (°C)

EAS – Tch

rth – tw

PULSE WIDTH tw (s)

Duty=0.5

SINGLE PULSE

−15 V

15 V

TEST CIRCUIT

WAVE FORM

IAR

BVDSS

VDD

VDS

RG = 25 Ω

VDD = 90 V, L = 6.36mH













−

⋅

=

VDD

BVDSS

2

I

L

2

1

ΕAS

DRAIN-SOURCE VOLTAGE VDS (V)

SAFE OPERATING AREA

※ SINGLE NONREPETITIVE PULSE

Tc=25

℃

CURVES

MUST

BE

DERATED

LINEARLY

WITH

INCREASE

IN

TEMPERATURE.

ID max (PULSED) *

ID max (CONTINUOUS) *

DC OPERATION

Tc

= 25°C

100

µs *

1 ms *

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2SK3569 Datasheet(PDF) 5 Page - Toshiba Semiconductor

2SK3569 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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