Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

06035J0R8BS Datasheet(PDF) 1 Page - NXP Semiconductors

Part # 06035J0R8BS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
Download  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J0R8BS Datasheet(HTML) 1 Page - NXP Semiconductors

  06035J0R8BS Datasheet HTML 1Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 2Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 3Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 4Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 5Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 6Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 7Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 8Page - NXP Semiconductors 06035J0R8BS Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 16 page
background image
MMG3014NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3014NT1 is a general purpose amplifier that is input and output
internally prematched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 4000 MHz such as cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
Features
 Frequency: 40--4000 MHz
 P1dB: 25 dBm @ 900 MHz
 Small--Signal Gain: 19.5 dB @ 900 MHz
 Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
 Single 5 V Supply
 Active Bias
 Cost--effective SOT--89 Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
40--4000 MHz, 19.5 dB
25 dBm
InGaP HBT GPA
MMG3014NT1
SOT--89
Table 1. Typical Performance (1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
Gp
19.5
15
10
dB
Input Return Loss
(S11)
IRL
--25
--12
--8
dB
Output Return Loss
(S22)
ORL
--11
--13
--19
dB
Power Output @1dB
Compression
P1dB
25
25.8
25
dBm
Third Order Output
Intercept Point
OIP3
40.5
40.5
40
dBm
1. VCC =5 Vdc, TA =25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
300
mA
RF Input Power
Pin
25
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81C, 5 Vdc, 135 mA, no RF applied
RJC
27.4
C/W
2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Document Number: MMG3014NT1
Rev. 5, 3/2016
Freescale Semiconductor
Technical Data
 Freescale Semiconductor, Inc., 2008, 2011, 2014, 2016. All rights reserved.


Similar Part No. - 06035J0R8BS

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors
06035J0R8BBS NXP-06035J0R8BBS Datasheet
468Kb / 15P
   Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014
06035J0R8BBS NXP-06035J0R8BBS Datasheet
571Kb / 14P
   RF LDMOS Wideband Integrated Power Amplifiers
More results

Similar Description - 06035J0R8BS

ManufacturerPart #DatasheetDescription
logo
Freescale Semiconductor...
MMG3003NT1 FREESCALE-MMG3003NT1_08 Datasheet
410Kb / 18P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3014NT1 FREESCALE-MMG3014NT1 Datasheet
356Kb / 17P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3001NT1 FREESCALE-MMG3001NT1 Datasheet
297Kb / 15P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
logo
NXP Semiconductors
MMG3006NT1 NXP-MMG3006NT1 Datasheet
478Kb / 24P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 6, 12/2017
MMG3005NT1 NXP-MMG3005NT1 Datasheet
456Kb / 20P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 10/2014
MMG3012NT1 NXP-MMG3012NT1 Datasheet
423Kb / 14P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 8, 9/2014
MMG3015NT1 NXP-MMG3015NT1 Datasheet
389Kb / 14P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 4, 9/2014
MMZ25332B NXP-MMZ25332B Datasheet
640Kb / 19P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 5/2014
logo
Freescale Semiconductor...
MMG3002NT1 FREESCALE-MMG3002NT1_08 Datasheet
340Kb / 16P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1 FREESCALE-MMG3012NT1_08 Datasheet
311Kb / 15P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMZ25332BT1 FREESCALE-MMZ25332BT1 Datasheet
570Kb / 19P
   Heterojunction Bipolar Transistor Technology (InGaP HBT)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com