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06035J0R8BS Datasheet(PDF) 1 Page - NXP Semiconductors |
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06035J0R8BS Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 16 page MMG3014NT1 1 RF Device Data Freescale Semiconductor, Inc. Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features Frequency: 40--4000 MHz P1dB: 25 dBm @ 900 MHz Small--Signal Gain: 19.5 dB @ 900 MHz Third Order Output Intercept Point: 40.5 dBm @ 900 MHz Single 5 V Supply Active Bias Cost--effective SOT--89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. 40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA MMG3014NT1 SOT--89 Table 1. Typical Performance (1) Characteristic Symbol 900 MHz 2140 MHz 3500 MHz Unit Small--Signal Gain (S21) Gp 19.5 15 10 dB Input Return Loss (S11) IRL --25 --12 --8 dB Output Return Loss (S22) ORL --11 --13 --19 dB Power Output @1dB Compression P1dB 25 25.8 25 dBm Third Order Output Intercept Point OIP3 40.5 40.5 40 dBm 1. VCC =5 Vdc, TA =25C, 50 ohm system, application circuit tuned for specified frequency. Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 300 mA RF Input Power Pin 25 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C Table 3. Thermal Characteristics Characteristic Symbol Value (2) Unit Thermal Resistance, Junction to Case Case Temperature 81C, 5 Vdc, 135 mA, no RF applied RJC 27.4 C/W 2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Document Number: MMG3014NT1 Rev. 5, 3/2016 Freescale Semiconductor Technical Data Freescale Semiconductor, Inc., 2008, 2011, 2014, 2016. All rights reserved. |
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