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06035J0R8BS Datasheet(PDF) 4 Page - NXP Semiconductors

Part # 06035J0R8BS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J0R8BS Datasheet(HTML) 4 Page - NXP Semiconductors

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4
RF Device Data
Freescale Semiconductor, Inc.
MMG3014NT1
50 OHM TYPICAL CHARACTERISTICS
4.5
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
42
40
38
4.7
5.5
5.1
f = 900 MHz
1 MHz Tone Spacing
100
--40
--20
0
20
40
60
80
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
40
38
Figure 10. Third Order Intermodulation versus
Output Power
Pout, OUTPUT POWER (dBm)
10
13
16
--80
--30
--50
--60
--40
150
103
105
120
Figure 11. MTTF versus Junction Temperature
104
125
130
135
140
145
TJ, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with VCC =5 Vdc, ICC = 135 mA
4
0
10
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
12
3
--70
--20
Pout, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
--30
--40
--50
--60
19
16
13
25
42
VCC =5 Vdc
f = 900 MHz
1 MHz Tone Spacing
25
10
22
4.9
5.3
--70
19
22
8
VCC =5 Vdc
VCC = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
VCC =5 Vdc
f = 900 MHz
1 MHz Tone Spacing


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