06035J0R8BS datasheet(2/16 Pages) NXP

Part #	06035J0R8BS

Description	Heterojunction Bipolar Transistor Technology (InGaP HBT)

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Manufacturer	NXP [NXP Semiconductors]

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RF Device Data

Freescale Semiconductor, Inc.

MMG3014NT1

Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Unit

Small--Signal Gain (S21)

Gp

18.5

19.5

—

dB

Input Return Loss (S11)

IRL

—

--25

—

dB

Output Return Loss (S22)

ORL

—

--11

—

dB

Power Output @ 1dB Compression

P1dB

—

25

—

dBm

Third Order Output Intercept Point

OIP3

—

40.5

—

dBm

Noise Figure

NF

—

5.7

—

dB

Supply Current

ICC

110

135

160

mA

Supply Voltage

VCC

—

5

—

V

Table 5. Functional Pin Description

Number

Pin Function

1

RFin

2

Ground

3

RFout/DC Supply

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology

Class

Human Body Model (per JESD22--A114)

1B

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

IV

Table 7. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

1

260

C

Figure 1. Functional Diagram

3

2

1

2

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