MMH3111NT1

1

RF Device Data

Freescale Semiconductor, Inc.

MMH3111NT1

250--4000 MHz, 12 dB

22.5 dBm

GaAs HFET GPA

Heterostructure Field Effect

Transistor (GaAs HFET)

Broadband High Linearity Amplifier

The MMH3111NT1 is a general purpose amplifier that is internally

input and output prematched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 250 to 4000 MHz such as cellular,

PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features

 Frequency: 250 to 4000 MHz

 P1dB: 22.5 dBm @ 900 MHz

 Small--Signal Gain: 12 dB @ 900 MHz

 Third Order Output Intercept Point: 44 dBm @ 900 MHz

 Single 5 V Supply

 Internally Prematched to 50 Ohms

 Internally Biased

 Cost--effective SOT--89 Surface Mount Plastic Package

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Characteristic

Symbol

900

MHz

2140

MHz

3500

MHz

Unit

Small--Signal Gain

(S21)

12

11.3

10

dB

Input Return Loss

(S11)

IRL

--14

--15

--16

dB

Output Return Loss

(S22)

ORL

--14

--19

--14

dB

Power Output @1dB

Compression

P1dB

22.5

22

22

dBm

Third Order Output

Intercept Point

OIP3

44

44

42

dBm

for specified frequency.

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

300

mA

RF Input Power

20

dBm

Storage Temperature Range

--65 to +150

C

Junction Temperature

150

C

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 95C, 5 Vdc, 150 mA, no RF applied

37.5

C/W

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MMH3111NT1

Rev. 4.1, 10/2014

Freescale Semiconductor

Technical Data

 Freescale Semiconductor, Inc., 2007--2008, 2010--2012, 2014. All rights reserved.