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06035J0R4BBS Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 06035J0R4BBS
Description  Heterostructure Field Effect Transistor (GaAs HFET)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J0R4BBS Datasheet(HTML) 2 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
11
12
dB
Input Return Loss (S11)
IRL
--14
dB
Output Return Loss (S22)
ORL
--14
dB
Power Output @ 1dB Compression
P1dB
22.5
dBm
Third Order Output Intercept Point
OIP3
44
dBm
Noise Figure
NF
3.2
dB
Supply Current
IDD
120
150
190
mA
Supply Voltage
VDD
5
V
Table 5. Functional Pin Description
Pin
Number
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
1A
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
1
260
C
Figure 1. Functional Diagram
3
2
1
2


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