06035J0R4BBS datasheet(2/15 Pages) NXP

Part #	06035J0R4BBS

Description	Heterostructure Field Effect Transistor (GaAs HFET)

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Manufacturer	NXP [NXP Semiconductors]

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RF Device Data

Freescale Semiconductor, Inc.

MMH3111NT1

Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Unit

Small--Signal Gain (S21)

Gp

11

12

—

dB

Input Return Loss (S11)

IRL

—

--14

—

dB

Output Return Loss (S22)

ORL

—

--14

—

dB

Power Output @ 1dB Compression

P1dB

—

22.5

—

dBm

Third Order Output Intercept Point

OIP3

—

44

—

dBm

Noise Figure

NF

—

3.2

—

dB

Supply Current

IDD

120

150

190

mA

Supply Voltage

VDD

—

5

—

V

Table 5. Functional Pin Description

Number

Pin Function

1

RFin

2

Ground

3

RFout/DC Supply

Table 6. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD 22--A114)

1A

Machine Model (per EIA/JESD 22--A115)

A

Charge Device Model (per JESD 22--C101)

IV

Table 7. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22--A113, IPC/JEDEC J--STD--020

1

260

C

Figure 1. Functional Diagram

3

2

1

2

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