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06035J100GBS Datasheet(PDF) 9 Page - NXP Semiconductors

Part # 06035J100GBS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J100GBS Datasheet(HTML) 9 Page - NXP Semiconductors

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MMA20312BVT1
9
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — W--CDMA
180
40
60
Figure 13. ACPR versus Collector Current
versus Output Power
Pout, OUTPUT POWER (dBm)
--10
--15
--20
--50
18
--35
--25
--45
810
80
100
120
140
160
--40
--55
24
200
20
0
--30
12
14
16
22
20
ACPR
45
10
15
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
Pout, OUTPUT POWER (dBm)
29
28
27
21
18
24
26
22
810
20
25
30
35
40
23
20
24
50
5
0
25
12
14
16
22
20
30
Gain
PAE
Figure 15. P1dB versus Frequency, CW
f, FREQUENCY (MHz)
30
29
28
25
27
2100
24
26
2120
31
2140
2160
2200
2180
ICC
VCC1 =VCC2 =VBIAS =5 Vdc
f = 2140 MHz
VCC1 =VCC2 =VBIAS =5 Vdc
f = 2140 MHz
VCC1 =VCC2 =VBIAS =5 Vdc
--60


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