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06035J100GBS Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 06035J100GBS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMA20312BVT1
Table 4. Electrical Characteristics (VCC1 =VCC2 =VBIAS = 5 Vdc, 2140 MHz, TA =25C, 50 ohm system, in Freescale W--CDMA
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21) (1)
Gp
23.6
27.2
dB
Input Return Loss (S11)
IRL
--10.7
dB
Output Return Loss (S22)
ORL
--15.5
dB
Power Output @ 1dB Compression, CW
P1dB
28.2
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
44.5
dBm
Noise Figure
NF
3.3
dB
Supply Current (1)
ICQ
62.5
70
77
mA
Supply Voltage
VCC
5
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0, rated to 150 V
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
VBA2
RFout
RFin
19
28
37
12
11
10
45
6
RFout
VCC1 VCC1
VBA1
VBIAS
VCC2
GND GND GND
VBA2
RFout
RFin
RFout
VCC1
VCC1
VBA1
VBIAS
VCC2
BIAS
CIRCUIT
BIAS
CIRCUIT
GND
GND
GND


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