MMA20312BT1

1

RF Device Data

Freescale Semiconductor, Inc.

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier

designed for use as a linear driver amplifier in wireless base station applications

as well as an output stage in femtocell or repeater applications. It is suitable for

applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA,

PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount

QFN plastic package.

Frequency

(dB)

ACPR

(dBc)

PAE

(%)

Test Signal

1880 MHz

29.0

--47.4

9.1

TD--SCDMA

1920 MHz

29.0

--46.7

9.0

TD--SCDMA

2010 MHz

27.4

--52.0

9.3

TD--SCDMA

2025 MHz

26.8

--50.0

9.5

TD--SCDMA

2140 MHz

27.0

--51.7

9.4

W--CDMA

Features

 Frequency: 1800--2200 MHz

 P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)

 Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)

 OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)

 Active Bias Control (adjustable externally)

 Single 5 V Supply

 Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Characteristic

Symbol

1800

MHz

2140

MHz

2200

MHz

Unit

Small--Signal Gain

(S21)

28.8

26.4

25.5

dB

Input Return Loss

(S11)

IRL

--17.6

--10.9

--9.7

dB

Output Return Loss

(S22)

ORL

--20.3

--14.7

--13.7

dB

Power Output @ 1dB

Compression

P1dB

30.5

30.5

30.5

dBm

CW Application Circuit

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

550

mA

RF Input Power

14

dBm

Storage Temperature Range

--65 to +150

C

Junction Temperature

175

C

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

52

C/W

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Freescale Semiconductor

Technical Data

Document Number: MMA20312B

Rev. 2, 9/2014

MMA20312BT1

1800--2200 MHz, 27.2 dB

30.5 dBm

InGaP HBT LINEAR AMPLIFIER

QFN 3  3

 Freescale Semiconductor, Inc., 2010--2012, 2014. All rights reserved.