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06035J100GBS Datasheet(PDF) 6 Page - NXP Semiconductors

Part # 06035J100GBS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J100GBS Datasheet(HTML) 6 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
TYPICAL CHARACTERISTICS — TD--SCDMA
180
40
60
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
--10
--15
--20
--50
17
--35
--25
--45
79
80
100
120
140
160
--40
--55
23
200
20
0
--30
11
13
15
21
19
--40C
25C
85C
--40C
25C
85C
ACPR
45
10
15
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
29
28
27
21
17
24
26
22
79
20
25
30
35
40
23
20
23
50
5
0
25
11
13
15
21
19
--40C
25C
85C
--40C
25C
85C
30
Gain
PAE
Figure 10. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
30
29
28
25
27
1800
24
26
1850
--40C
25C
85C
31
1900
1950
2050
2000
ICC
VCC1 =VCC2 =VBIAS =5 Vdc
f = 2017.5 MHz
VCC1 =VCC2 =VBIAS =5 Vdc
f = 2017.5 MHz
VCC1 =VCC2 =VBIAS =5 Vdc
--60


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