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06035J1R8BBS Datasheet(PDF) 17 Page - NXP Semiconductors

Part # 06035J1R8BBS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J1R8BBS Datasheet(HTML) 17 Page - NXP Semiconductors

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MMA20312BVT1
17
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2011
 Initial Release of Data Sheet
1
Dec. 2011
 Updated minimum operating voltage from 3.3 V to 3 V to reflect actual device capability, p. 1
 All references to “VCTRL” in the data sheet tables, test circuit schematics and component layouts is
replaced with “VBIAS”. VBIAS is the supply voltage which sets the internal bias conditions via pins 1, 2, and
12, pp. 1--3, 5--7, 9, 10, 12. Footnote “(1) VBIAS [Board] supplies VBA1,VBA2 and VBIAS [Device]” added to
test circuit component layouts, pp. 4, 8, 11.
2
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added Failure Analysis information, p. 17


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