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T2N7002BK Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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T2N7002BK Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page T2N7002BK 1 MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK Start of commercial production 2015-05 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching 2. 2. 2. 2. Features Features Features Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit SOT23 1: Gate 2: Source 3: Drain 2017-11-30 Rev.2.0 ©2015-2017 Toshiba Electronic Devices & Storage Corporation |
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